Defining a dopant concentration been the key factor to understand a semiconductor device performance. In an effort of minimize scale of electric devices, memory devices or display panel has just a few nano size with atoms layered in 2D structure or 3D structure. To investigate these small structures, resolution is important as well as accuracy of measurement system.

Scanning capacitance microscopy (SCM) is the most adequate technique to measure the capacitance distribution on material surface which has the resolution of nanometer scale. Park systems’ enhanced scanning technique helps to acquire accurate capacitance signal without artifacts from tip-sample charging effect or stray capacitance noise.

In this talk, we demonstrate a full SCM analysis on a sample with various doping concentration range. In addition, advanced scanning method like ‘Quickstep’ and ‘Pinpoint’ will be adapted to the measurement to maximize accuracy and throughput of the data.

Presented By : 
Zoe Kim, Park Systems Korea

Zoe Kim is an application engineer at Park Systems Korea, her role includes but is not limited to surface inspection and mechanical lithography on display panel, semi-conductor devices, and battery samples with electrical, mechanical, and thermal analysis. She is also assigned in writing technical articles for publications. She received her Bachelor's Degree in Physics from Incheon National University and her Master's degree from Sungkunkwan University, South Korea.