Friday, May 15, 2020
- 3:00 pm
(EDT)
Boston, New York - 12:00 pm
(PDT)
San Francisco, LA - 8:00 pm
(GMT)
London - 9:00 pm
(CET)
Paris, Rome
P-Doped Silicon Sample
SCM image shows distinguishable dopant levels (doping concentration: 1×1016 /Cm3 - 1×1020 /Cm3) of the P-doped silicon sample.
Scanning Capacitance Microscopy (SCM) is an advanced imaging mode of Park AFM used to map various doping levels of non-uniformly doped semiconductor samples. It provides doping concentration information over the sample surface by measuring the capacitance change between tip and sample. This session will demonstrate how to acquire the doping profile for a sample by using Park Systems’ SCM module. The basic principle, instrumentation set-up, and data analysis will be covered.
Presented By :
Jiali Zhang, Ph.D., Technical Support Engineer,
Park Systems
Jiali Zhang, Ph.D., is an engineer for Park Systems, where she focuses on the installation and support of AFM systems for Park’s research user base. She is also responsible for researching and writing technical papers and application notes for publication and presentation at scientific conferences. She received her Ph.D. in Analytical Chemistry from the University of California, Davis, and holds a B.S. in Applied Chemistry from Donghua University in Shanghai, China. Her expertise spans numerous microscopy techniques, and areas of study have also included biological systems and 3D printing technologies.