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AlN/GaN/AlN Hetero Structure
AlN/GaN/AlN hetero structure grown on SiC substrate by Molecular Beam Epitaxy (MBE) system.
Scanning Conditions
- System: NX20
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 5μm×5μm
- Scan Rate: 0.5Hz
- Pixel Size: 512 × 512
- Scan Mode: Non-contact
- Cantilever: AC160TS (k=26N/m, f=300kHz)
- Scan Size: 5μm×5μm
- Scan Rate: 0.5Hz
- Pixel Size: 512 × 512