DRAM test sample with 68 nm channel
Semiconductors & Devices
A DRAM test structure with a 68 nm channel was characterized using Scanning Spreading Resistance Microscopy (SSRM). The resistance image reveals nanoscale contrast across the channel region, with a peak-to-valley difference of about 27.5 GΩ.
Scanning Conditions
- System: NX-Hivac
- Scan Mode: Scanning Spreading Resistance Microscopy (SSRM), (Channel: SSRM Resistance)
- Scan Rate: 2 Hz
- Scan Size: 250 µm × 250 µm
- Pixel Size: 128 × 128 pixels
- Peak-to-valley: 27.5 GΩ
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