High Performance P-Channel Transistor Based on Amorphous Tellurium Trioxide
- Journal: Advanced Materials
- Published Year: 2025
- Application: Next-gen CMOS and logic electronics, displays and large-area electronic, optoelectronic components
Summary
Amorphous tellurium trioxide (a-TeO₃), converted from 2D tellurium, is revealed in this paper as a high-performance 2D p-type semiconductor for CMOS-compatible p-channel transistors. It offers a wide bandgap (~3 eV), high hole mobility, very low Schottky barrier height and sheet resistance, reduced hysteresis, and strongly improved on/off ratios compared to crystalline Te, overcoming key limits of p-type oxides.
These results come from a correlative microscopy and transport study using non-contact AFM and KPFM, supported by HRTEM, Raman, XPS, and electrical measurements.
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