-
Mosfet IndiumTinOxide GaP Cell FrictionalForceMicroscopy FailureAnlaysis PiezoelectricForceMicroscopy Ni81Fe19 HexagonalBN Fet FailureAnalysis CBD cannabinoid Stiffness LowDensityPolyethylene Tungsten_disulfide phase_change Chromium TiO2 NanoLithography Pvdf Granada ShenYang Chemical_Vapor_Deposition Scanning_Thermal_Microscopy LMF BlockCopolymer Laser semifluorinated alkane P3HT GaAs Forevision Step ForceDistanceSpectroscopy Tin disulfide
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
Graphene_hBN Moiré Pattern
Scanning Conditions
- System: NX10
- Scan Mode: Non-contact
- Cantilever: NCHR
- Scan Size: 500nm×500nm,
- Scan Rate: 2Hz, 4Hz
- Pixel: 256 × 256
- Scan Mode: Non-contact
- Cantilever: NCHR
- Scan Size: 500nm×500nm,
- Scan Rate: 2Hz, 4Hz
- Pixel: 256 × 256