Epi Wafer
The epi wafer consists of an epitaxial semiconductor layer where electrical uniformity and defect-related leakage critically impact device performance and yield.
Conductive AFM maps bias-dependent current distribution, showing uniform conduction under positive bias and localized leakage at step-edge defects under negative bias, enabling precise defect identification.
Scan Conditions
- System: NX10
- Scan Mode: C-AFM
- Scan Size: 5 µm×5 µm
- Scan Rate: 1 Hz
- Pixels: 512×512
- Cantilever: RMN-25PT300B (k=18 N/m, f=20 kHz)
- Sample Bias: ±10 VDC
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