SiC MOSFET
Semiconductors & Devices
A SiC MOSFET was characterized using Scanning Spreading Resistance Microscopy (SSRM). The current images measured under vacuum (left) and ambient (right) conditions highlight the improved visualization of electrical properties achievable in vacuum.
Scanning Conditions
- System: NX-Hivac
- Scan Mode: Scanning Spreading Resistance Microscopy (SSRM), (Channel: Current)
- Scan Rate: 0.5 Hz
- Scan Size: 1.5 µm × 1.5 µm
- Pixel Size: 256 × 512 pixels
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