Scanning capacitance microscopy; advanced analysis for nanoscale semiconductor surface
SPEAKERS
  • Zoe Kim
    Park Systems Corp., Suwon, Republic of Korea
Authors
Zoe Kim
Defining a dopant concentration been the key factor to understand a semiconductor device performance. In an effort of minimize scale of electric devices, memory devices or display panel has just a few nano size with atoms layered in 2D structure or 3D structure. To investigate these small structures, resolution is important as well as accuracy of measurement system.

Scanning capacitance microscopy (SCM) is the most adequate technique to measure the capacitance distribution on material surface which has the resolution of nanometer scale. Park systems’ enhanced scanning technique helps to acquire accurate capacitance signal without artifacts from tip-sample charging effect or stray capacitance noise.

In this talk, we demonstrate a full SCM analysis on a sample with various doping concentration range. In addition, advanced scanning method like ‘Quickstep’ and ‘Pinpoint’ will be adapted to the measurement to maximize accuracy and throughput of the data.